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Photoelectric conversion enhancement of Ag modified p-type Cu2O/n-type ZnO transparent heterojunction device

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Abstract

The Ag modified transparent Cu2O/ZnO p–n junction films were prepared by a simple magnetron sputtering process. The transparence and photoelectric conversion of these devices were investigated, which exhibited an obvious photoelectric conversion enhancement (PCE of 0.48%, ten times) than those of the unmodified heterojunction. Through analysis, the enhancement of the photoelectric conversion could be attributed to the remarkable Cu2O/ZnO p–n junction and Ag0 nanoparticles with the performances of photoelectron donor and surface enhanced plasmonic absorption.

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Acknowledgements

This study was funded by the Natural Science Foundation of China (Grant Nos. 51672249, 51603187 and 51802282) and the Zhejiang Provincial Natural Science Foundation of China (Grant No. LQ17F040004).

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Authors and Affiliations

  1. Department of Physics, Key Laboratory of ATMMT Ministry of Education, Zhejiang Sci-Tech University, Hangzhou, 310018, People’s Republic of China

    Chuang Zhao, Jiaqi Pan, Beibei Wang, Zongjun Dong, Ziyuan Jiang, Jingjing Wang, Changsheng Song, Yingying Zheng & Chaorong Li

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  1. Chuang Zhao
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  2. Jiaqi Pan
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Correspondence to Chaorong Li.

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Zhao, C., Pan, J., Wang, B. et al. Photoelectric conversion enhancement of Ag modified p-type Cu2O/n-type ZnO transparent heterojunction device. J Mater Sci: Mater Electron 29, 20485–20492 (2018). https://doi.org/10.1007/s10854-018-0183-x

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