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Properties of Ta–Mo alloy gate electrode for n-MOSFET

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Authors and Affiliations

  1. School of Electronic Engineering, Telecommunication and Computer Engineering, Hankuk Aviation University, 200-1, Hwajon-dong, Deokyang-gu, Kyonggi-do, Koyang-City, 412-791, Korea

    Chung Keun Lee, Jae Young Kim & Shin Nam Hong

  2. Advanced Micro Devices, Hopewell Junction, NY, 12533, USA

    Huicai Zhong

  3. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, 27695, USA

    Bei Chen & Veena Misra

Authors
  1. Chung Keun Lee
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  2. Jae Young Kim
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  3. Shin Nam Hong
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  4. Huicai Zhong
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  5. Bei Chen
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  6. Veena Misra
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Correspondence to Chung Keun Lee.

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Lee, C.K., Kim, J.Y., Hong, S.N. et al. Properties of Ta–Mo alloy gate electrode for n-MOSFET. J Mater Sci 40, 2693–2695 (2005). https://doi.org/10.1007/s10853-005-2108-3

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  • DOI: https://doi.org/10.1007/s10853-005-2108-3

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