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Compact model and circuit simulations for asymmetric, independent gate FinFETs

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Abstract

We present a rigorous surface-potential-based compact model of independent-gate asymmetric FinFETs enabled by solving several long-standing theoretical problems. The model is verified with TCAD simulations and is implemented in a standard circuit simulator. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric FinFETs.

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References

  1. Asenov, A., Slavcheva, G., Brown, A., Davies, J., Saini, S.: IEEE Trans. Electron Devices 48(4), 722 (2001)

    Article  Google Scholar 

  2. Ortiz-Conde, A., García-Sánchez, F.J., Muci, J., Malobabic, S., Liou, J.J.: IEEE Trans. Electron Devices 54(1), 131 (2007)

    Article  Google Scholar 

  3. Song, J., Yu, B., Yuan, Y., Taur, Y.: IEEE Trans. Circuits Syst. I 56(8), 1858 (2009)

    Article  Google Scholar 

  4. Dessai, G., Dey, A., Gildenblat, G., Smit, G.D.J.: Solid-State Electron. 53(5), 548 (2009)

    Article  Google Scholar 

  5. Taur, Y.: In: Gildenblat, G. (ed.) Compact Modeling: Principles, Techniques and Applications. Springer, Berlin (2010). Chap. 14

    Google Scholar 

  6. Cakici, T., Bansal, A., Roy, K.: In: Proc. IEEE Int. SOI Conf., pp. 21–22 (2003)

  7. Pei, G., Kan, E.C.: IEEE Trans. Electron Devices 51(12), 2094 (2004)

    Article  Google Scholar 

  8. Zhang, W., Fossum, J.G., Mathew, L., Du, Y.: IEEE Trans. Electron Devices 52(10), 2198 (2005)

    Article  Google Scholar 

  9. Chiang, M.H., Kim, K., Chuang, C.T., Tretz, C.: IEEE Trans. Electron Devices 53(9), 2370 (2006)

    Article  Google Scholar 

  10. Shrivastava, M., Baghini, M.S., Sachid, A.B., Sharma, D.K., Rao, V.R.: IEEE Trans. Electron Devices 55(11), 3274 (2008)

    Article  Google Scholar 

  11. Tawfik, S.A., Kursun, V.: IEEE Trans. Electron Devices 55(1), 60 (2008)

    Article  Google Scholar 

  12. Lu, H., Taur, Y.: IEEE Trans. Electron Devices 53(5), 1161 (2006)

    Article  Google Scholar 

  13. Dessai, G., Gildenblat, G.: Solid-State Electron. 54(4), 382 (2010)

    Article  Google Scholar 

  14. Sahoo, A., Thakur, P.K., Mahapatra, S.: IEEE Trans. Electron Devices 57(3), 632 (2010)

    Article  Google Scholar 

  15. Gildenblat, G., Li, X., Wu, W., Wang, H., Jha, A., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M.: IEEE Trans. Electron Devices 53(9), 1979 (2006)

    Article  Google Scholar 

  16. Wu, W., Yao, W., Gildenblat, G.: Solid-State Electron. 54(5), 595 (2010)

    Article  Google Scholar 

  17. Lu, D.D., Dunga, M., Lin, C.H., Niknejad, A.M., Hu, C.: In: IEDM Tech. Dig., pp. 565–568 (2007)

  18. Liu, F., He, J., Fu, Y., Hu, J., Bian, W., Song, Y., Zhang, X., Chan, M.: IEEE Trans. Electron Devices 55(3), 816 (2008)

    Article  Google Scholar 

  19. Dessai, G., Wu, W., Gildenblat, G.: IEEE Trans. Electron Devices 57(9), 2106 (2010)

    Article  Google Scholar 

  20. Smit, G.D.J., Scholten, A.J., Curatola, G., van Langevelde, R., Gildenblat, G., Klaassen, D.B.M.: In: NSTI-Nanotech, vol. 3, pp. 520–525 (2007)

  21. Lemaitre, L., Coram, G., McAndrew, C., Kundert, K.: In: Proc. BMAS, pp. 134–138 (2003)

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Authors and Affiliations

  1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA

    Gajanan Dessai, Weimin Wu, Bertan Bakkaloglu & Gennady Gildenblat

  2. Freescale Semiconductor, Tempe, AZ, 85284, USA

    Colin C. McAndrew

Authors
  1. Gajanan Dessai
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  2. Weimin Wu
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  3. Bertan Bakkaloglu
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  4. Colin C. McAndrew
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  5. Gennady Gildenblat
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Correspondence to Gajanan Dessai.

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Dessai, G., Wu, W., Bakkaloglu, B. et al. Compact model and circuit simulations for asymmetric, independent gate FinFETs. J Comput Electron 9, 103–107 (2010). https://doi.org/10.1007/s10825-010-0312-0

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  • DOI: https://doi.org/10.1007/s10825-010-0312-0

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