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DSMC versus WENO-BTE: A double gate MOSFET example

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Abstract

Time-dependent solutions to the Boltzmann-Poisson system in two spatial dimensions and three-dimensional velocity space are obtained by using a recently developed high order WENO scheme. The collision operator of the Boltzmann equation models the scattering processes between electrons and phonons which are assumed to be in thermal equilibrium. In this paper, the deterministic numerical solutions for a double gate silicon MOSFET are compared with Monte Carlo simulations. The main aim of this investigation is to show how direct solutions of the Boltzmann transport equation coupled with the Poisson equation can, through comparisons, suggest improvements of the DSMC algorithms such as, in particular, the charge assignment to the mesh, the treatment of the boundary conditions and the free flight duration.

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Authors and Affiliations

  1. Departamento de Matemática Aplicada, Universidad de Granada, 18071, Granada, Spain

    Maria José Cáceres

  2. ICREA - Department de Matemàtiques, Universitat Autònoma de Barcelona, E-08193, Bellaterra, Spain

    José Antonio Carrillo

  3. Department of Mathematics and ICES, The University of Texas, Austin, USA

    Irene Gamba

  4. Dipartimento di Matematica e Informatica, Università di Catania, Catania, Italy

    Armando Majorana

  5. Division of Applied Mathematics, Brown University, Providence, RI, 02912, USA

    Chi-Wang Shu

Authors
  1. Maria José Cáceres
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  2. José Antonio Carrillo
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  3. Irene Gamba
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  4. Armando Majorana
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  5. Chi-Wang Shu
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Correspondence to Maria José Cáceres.

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Cáceres, M.J., Carrillo, J.A., Gamba, I. et al. DSMC versus WENO-BTE: A double gate MOSFET example. J Comput Electron 5, 471–474 (2006). https://doi.org/10.1007/s10825-006-0035-4

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  • DOI: https://doi.org/10.1007/s10825-006-0035-4

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