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Self-Consistent potential calculation for locally oxidized Ga[Al]As heterostructures

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Journal of Computer-Aided Materials Design

Abstract

We simulate the influence of local oxidation with an atomic force microscope (AFM) tip on the surface of a GaAlAs/GaAs heterostructure by means of numerical calculations. Assuming a rectangular shape of the oxide line, we solve the Schrödinger and Poisson equations self-consistently on a two-dimensional surface perpendicular to the oxide line. We observe that the distance between the two-dimensional electron gas (2DEG) and the surface is a crucial parameter for the electron density, confirming experimental 2DEG depletion results.

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Authors and Affiliations

  1. Institute for Theoretical Physics, ETH Zurich, CH-8093, Zurich, Switzerland

    C. May & M. Troyer

  2. Solid State Physics Laboratory, ETH Zurich, CH-8093, Zurich, Switzerland

    K. Ensslin

Authors
  1. C. May
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  2. K. Ensslin
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  3. M. Troyer
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Correspondence to C. May.

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May, C., Ensslin, K. & Troyer, M. Self-Consistent potential calculation for locally oxidized Ga[Al]As heterostructures. J Computer-Aided Mater Des 14, 91–96 (2007). https://doi.org/10.1007/s10820-006-9023-z

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  • DOI: https://doi.org/10.1007/s10820-006-9023-z

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