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and Si(110)-SiO2 interfaces and DC-electric-field induced TH and FH generation is then observed in Si(111)-SiO2-Cr and Si(110)-SiO2-Cr MOS structures for the first time. A systematic phenomenological analysis of azimuthal anisotropy of TH and FH generation intensity is performed for (111) and (110) surfaces of Oh symmetric single crystals. A phenomenological model of electro-induced effects in TH and FH generation is then developed and the surface specificity and sensitivity of TH and FH generation are discussed. Optical interference of surface electro-induced and bulk bias-independent contributions to the effective third-order nonlinear polarization is proposed as the mechanism underlying surface sensitivity of electro-modulated TH probe.
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Received: 16 October 1998
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Kempf, R., Wilson, P., Canterbury, J. et al. Third and fourth harmonic generation at Si-SiO2 interfaces and in Si-SiO2-Cr MOS structures . Appl Phys B 68, 325–332 (1999). https://doi.org/10.1007/s003400050627
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DOI: https://doi.org/10.1007/s003400050627