Abstract
The BiFeO3 film grown on Si substrate without template exhibits a diode-like effect, and the forward direction of the diode can be switched by external electric fields. The laser irradiation and the magnetic field can induce polarization, thus modulating the photovoltaic effect. The magnetoresistance values change from −1.19 to −5.79 and to −35.48 % dramatically under 50 μA current in 770 Oe when the junction is irradiated by 532 and 1064 nm lasers, respectively. These results reveal unusual and interesting charge conduction behavior in leaky ferroelectrics and should promote the study of BiFeO3 based on multifunctional materials.
Similar content being viewed by others
References
W. Eerenstein, N.D. Mathur, J.F. Scott, Nature 442, 759 (2006)
V. Garcia, A. Barthélémy, Science 327, 1106 (2010)
C.M. Raghavan, J.W. Kim, S.S. Kim, T.K. Song, Appl. Phys. A 119, 667 (2015)
C.A.F. Vaz, J. Phys, Condens. Matter 24, 333201 (2012)
M. Muneeswaran, P. Jegatheesan, M. Gopiraman, I.S. Kim, N.V. Giridharan, Appl. Phys. A 114, 853 (2014)
G.S. Lotey, N.K. Verma, Chem. Phys. Lett. 574, 71 (2013)
F.A. Cuellar, Y.H. Liu, J. Salafranca, N. Nemes, E. Iborra, G. Sanchez-Santolino, M. Varela, M.G. Hernandez, J.W. Freeland, M. Zhernenkov, M.R. Fitzsimmons, S. Okamoto, S.J. Pennycook, M. Bibes, A. Barthélémy, S.G.E. te Velthuis, Z. Sefrioui, C. Leon, J. Santamaria, Nat. Commun. 5, 4215 (2014)
G.S. Lotey, N.K. Verma, Mater. Sci. Semicond. Process. 21, 206 (2014)
C. Ederer, N. Spaldin, Phys. Rev. B 71, 060401 (2005)
Gustau Catalan, James F. Scott, Adv. Mater. 21, 2463 (2009)
S.V. Kisilev, R.P. Ozerov, G.S. Zhdanov, Sov. Phys. Dokl. 7, 742 (1963)
J.R. Teague, R. Gerson, Solid State Commun. 8, 1073 (1970)
R. Palai, R.S. Katiyar, H. Schmid, P. Tissot, S.J. Clark, J. Robertson, S.A.T. Redfern, G. Catalan, J.F. Scott, Phys. Rev. B 77, 014110 (2008)
T.P. Gujar, V.R. Shinde, C.D. Lokhande, Mater. Chem. Phys. 103, 142 (2007)
V. Fruth, E. Tenea, M. Gartner, M. Anastasescu, D. Berger, R. Ramer, M. Zaharescu, J. Eur. Ceram. Soc. 27, 937 (2007)
J.F. Ihlefeld, N.J. Podraza, Z.K. Liu, R.C. Rai, X. Xu, T. Heeg, Y.B. Chen, J. Li, R.W. Collins, J.L. Musfeldt, X.Q. Pan, J. Schubert, R. Ramesh, D.G. Schlom, Appl. Phys. Lett. 92, 142908 (2008)
Y. Xu, M. Shen, Mater. Lett. 62, 3600 (2008)
S.J. Clark, J. Robertson, Appl. Phys. Lett. 90, 132903 (2007)
T. Choi, S. Lee, Y.J. Choi, V. Kiryukhin, S.W. Cheong, Science 324, 63 (2009)
W. Ji, K. Yao, Y.C. Liang, Adv. Mater. 22, 1763 (2010)
S.R. Basu, L.W. Martin, Y.H. Chu, M. Gajek, R. Ramesh, R.C. Rai, X. Xu, J.L. Musfeldt, Appl. Phys. Lett. 92, 091905 (2008)
S.Y. Yang, L.W. Martin, S.J. Byrnes, T.E. Conry, S.R. Basu, D. Paran, L. Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Y.H. Chu, C.H. Yang, J.L. Musfeldt, D.G. Schlom, J.W. Ager III, R. Ramesh, Appl. Phys. Lett. 95, 062909 (2009)
L. Wang, Y.L. Jin, K.J. Jin, C. Wang, H.B. Lu, C. Wang, C. Ge, X.Y. Chen, E.J. Guo, G.Z. Yang, Europhys. Lett. 96, 17008 (2011)
J. Kreisel, M. Alexe, P.A. Thomas, Nat. Mater. 11, 260 (2012)
H.T. Huang, Nat. Photonics 4, 134 (2010)
J.L. Giocondi, G.S. Rohrer, Chem. Mater. 13, 241 (2001)
S.V. Kalinin, D.A. Bonnell, T. Alvarez, X. Lei, Z. Hu, J.H. Ferris, Nano Lett. 2, 589 (2002)
S. Habicht, R.J. Nemanich, A. Gruverman, Nanotechnology 19, 495303 (2008)
Z.J. Yue, K. Zhao, H. Ni, S.Q. Zhao, Y.C. Kong, H.K. Wong, A.J. Wang, J. Phys. D Appl. Phys. 44, 095103 (2011)
F. Yan, G.N. Chen, L. Lu, J.E. Spanier, ACS Nano 6, 2353 (2012)
Acknowledgments
This work has been supported by the National Basic Research Program of China (No. 2014CB744302), the Fundamental Research Funds for the Central Universities (No. 14CX02157A), the Specially Founded Program on National Key Scientific Instruments and Equipment Development (No. 2012YQ140005) and the National Nature Science Foundation of China (No. 11574401).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Xi, J., Ni, H., Zhao, K. et al. Photoinduced magnetoresistance and magnetic-field-modulated photoelectric response in BiFeO3/Si heterojunctions. Appl. Phys. A 122, 489 (2016). https://doi.org/10.1007/s00339-016-0027-6
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s00339-016-0027-6