Abstract
We present a method to trigger highly selective and directed growth of individual silicon nanowires based on an electrically biased atomic force microscope (AFM) tip. The biased tip affects the nanowire growth behavior right from the initial stage. In particular, the locally intensified electric field at the AFM tip apex assists the dissociation of the precursor gas molecules and exerts augmented electrostatic force on the catalyst/NW assembly. Therefore, the electrically biased tip can be a candidate tool for the direct synthesis/integration of semiconductor nanomaterials on temperature-sensitive substrates.
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Acknowledgments
The authors gratefully acknowledge support by DARPA/MTO under Grant N66001-08-1-204. SEM analysis performed at the National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, was supported by the Scientific User Facilities Division of the Office of Basic Energy Sciences, U.S. Department of Energy under Contract No. DE-AC02-05CH11231.
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Sang-gil Ryu and Eunpa Kim have contributed equally to this work.
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Ryu, Sg., Kim, E., Hwang, D.J. et al. Selective and directed growth of silicon nanowires by tip-enhanced local electric field. Appl. Phys. A 121, 255–260 (2015). https://doi.org/10.1007/s00339-015-9427-2
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DOI: https://doi.org/10.1007/s00339-015-9427-2