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Rectifying and photovoltage characteristics of Bi2Sr2Co2Oy/Nb-doped SrTiO3 heterojunction

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Abstract

A heterojunction was fabricated by growing a layer of Bi2Sr2Co2O y thin film on the 0.7 wt% Nb-doped SrTiO3 substrate. Such heterojunction showed good rectifying characteristics over a wide temperature range, and its transport mechanism under the forward bias can be attributed to a space charge limited conduction mechanism via defects near the interface of the heterojunction. Photovoltaic properties of the heterojunction were studied by using both continuous-wave and pulsed irradiations and the results can be well explained by the photovoltaic effect of a p–n junction.

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Authors and Affiliations

  1. Hebei Key Laboratory of Optic-Electric Information and Materials, College of Physics Science and Technology, Hebei University, 071002, Baoding, P.R. China

    Shufang Wang, Huiling Li, Mingjing Chen, Jingchun Chen, Jianglong Wang & Guangsheng Fu

  2. College of Science, Chinese University of Petroleum, 102249, Beijing, P.R. China

    Kun Zhao & Songqing Zhao

Authors
  1. Shufang Wang
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  2. Huiling Li
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  3. Kun Zhao
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  4. Songqing Zhao
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  5. Mingjing Chen
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  6. Jingchun Chen
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  7. Jianglong Wang
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  8. Guangsheng Fu
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Correspondence to Shufang Wang or Kun Zhao.

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Wang, S., Li, H., Zhao, K. et al. Rectifying and photovoltage characteristics of Bi2Sr2Co2Oy/Nb-doped SrTiO3 heterojunction. Appl. Phys. A 105, 407–410 (2011). https://doi.org/10.1007/s00339-011-6551-5

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  • DOI: https://doi.org/10.1007/s00339-011-6551-5

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