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Laser-induced lateral voltage in epitaxial Al-doped ZnO thin films on tilted sapphire

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Abstract

Laser-induced voltage effects in epitaxial Al-doped ZnO thin films on tilted sapphire have been experimentally studied at room temperature. An open-circuit lateral voltage signal with nanosecond response time was observed when the film surface was irradiated by laser pulses of 308 nm and 1064 nm, and the voltage responsivity of the signal for 308-nm irradiation is much higher than that for 1064-nm irradiation. A mechanism based on the thermoelectric effect is proposed to explain the origin of the laser-induced lateral voltage in this system. The result suggests that the Al-doped ZnO thin films have a potential application in wide-band photodetectors from ultraviolet to near infrared.

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Authors and Affiliations

  1. College of Physics Science and Technology, Hebei University, 071002, Baoding, P.R. China

    Shufang Wang, Mingjing Chen, Wei Yu, Jingchun Chen, Jianglong Wang & Guangsheng Fu

  2. Department of Mathematics and Physics, Chinese University of Petroleum, 102249, Beijing, P.R. China

    Kun Zhao & Songqing Zhao

Authors
  1. Shufang Wang
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  2. Mingjing Chen
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  3. Kun Zhao
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  4. Wei Yu
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  5. Jingchun Chen
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  6. Songqing Zhao
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  7. Jianglong Wang
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  8. Guangsheng Fu
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Correspondence to Shufang Wang or Kun Zhao.

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Wang, S., Chen, M., Zhao, K. et al. Laser-induced lateral voltage in epitaxial Al-doped ZnO thin films on tilted sapphire. Appl. Phys. A 103, 1179–1182 (2011). https://doi.org/10.1007/s00339-010-6106-1

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  • DOI: https://doi.org/10.1007/s00339-010-6106-1

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