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Indium oxide nanostructures

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Abstract

In this report we review the growth of indium oxide (In2O3) nanostructures, including octahedral nanocrystals (NCs), nanobelts (NBs), nanosheets (NSs), and nanowires (NWs), by hot-wall chemical vapor deposition (HW-CVD). This system is highly controllable, allowing the user to easily access different growth regimes – each corresponding to the growth of a different nanostructure – by changing growth variables of the HW-CVD system. Hot-wall CVD produces crystalline nanostructures; here we present a survey of microstructural characterizations of the four types of In2O3 nanostructures using transmission- and scanning-electron microscopy. Interestingly, the In2O3 nanostructures have different preferred growth directions: NCs have (111) faces, NBs are predominantly (200), and NWs are predominantly (110). We end the review by discussing the current shortcomings of HW-CVD growth of In2O3 nanostructures.

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Author information

Authors and Affiliations

  1. Departments of Electrical Engineering, Yale University, P.O. Box 208284, New Haven, CT, 06520, USA

    G. Cheng & M.A. Reed

  2. Departments of Physics, Yale University, P.O. Box 208284, New Haven, CT, 06520, USA

    E. Stern

  3. Departments of Biomedical Engineering, Yale University, P.O. Box 208284, New Haven, CT, 06520, USA

    S. Guthrie

  4. Departments of Applied Physics, Yale University, P.O. Box 208284, New Haven, CT, 06520, USA

    M.A. Reed

  5. Center for Functional Nanomaterials, Brookhaven National Laboratory, P.O. Box 5000, Upton, NY, 11973, USA

    R. Klie

  6. Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei, 230031, P.R. China

    Y. Hao, G. Meng & L. Zhang

Authors
  1. G. Cheng
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  2. E. Stern
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  3. S. Guthrie
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  4. M.A. Reed
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  5. R. Klie
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  6. Y. Hao
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  7. G. Meng
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  8. L. Zhang
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Corresponding authors

Correspondence to G. Cheng or E. Stern.

Additional information

PACS

61.46.-w; 61.82.Rx; 73.31.Hb; 81.02.-b

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Cheng, G., Stern, E., Guthrie, S. et al. Indium oxide nanostructures. Appl. Phys. A 85, 233–240 (2006). https://doi.org/10.1007/s00339-006-3706-x

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  • DOI: https://doi.org/10.1007/s00339-006-3706-x

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