Skip to main content
SpringerLink
Log in

Polymer thin-film transistors with high dielectric constant gate insulators

  • Rapid communication
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Field-effect transistors consisting of poly(3-hexylthiophene) have been fabricated with high dielectric constant SrBi2Ta2O9 films working as the gate insulator. Significantly enhanced gate effects were observed in these devices compared to similar transistors with conventional SiO2 gate dielectric. Our devices exhibited operating voltages around 10 V, as compared to about 100 V for devices employing SiO2 as the gate dielectric. Moreover, inverters based on such polymer transistors were demonstrated with nice input–output characteristics.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Tsumura, H. Koezuka, T. Ando: Appl. Phys. Lett. 49, 1210 (1986)

    Article  Google Scholar 

  2. D.J. Gundlach, Y.Y. Lin, T.N. Jackson, D.G. Schlom: Appl. Phys. Lett. 71, 3858 (1997)

    Article  Google Scholar 

  3. H.E. Katz, A.J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, W. Li, Y.Y. Lin, A. Dodabalapur: Nature 404, 478 (2000)

    Article  Google Scholar 

  4. S. Feng, T. Bein: Nature 368, 834 (1994)

    Article  Google Scholar 

  5. G. Velu, C. Legrand, O. Tharaud, A. Chapoton, D. Remiens, G. Horowitz: Appl. Phys. Lett. 79, 659 (2001)

    Article  Google Scholar 

  6. G.M. Whitesides, B. Grzybowski: Science 295, 2418 (2002)

    Article  Google Scholar 

  7. Z. Bao, A Dodabalapur, J. Lovinger: Appl. Phys. Lett. 69, 4108 (1996)

    Article  Google Scholar 

  8. A. Javey, H. Kim, M. Brink, Q. Wang, A. Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, H. Dai: Nature Mater. 1, 241 (2002)

    Article  Google Scholar 

  9. J.P. Han, T.P. Ma: Appl. Phys. Lett. 72, 1185 (1998)

    Article  Google Scholar 

  10. C.D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, J. Shaw: Science 283, 822 (1999)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical Engineering, University of Southern California, 90089, Los Angeles, CA, USA

    S. Han , X. Liu  & C. Zhou

  2. Department of Electrical Engineering, Yale University, 06520, New Haven, CT, USA

    J.-P. Han

Authors
  1. S. Han
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. X. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. J.-P. Han
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. C. Zhou
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to C. Zhou .

Additional information

PACS

82.35.Cd

Rights and permissions

Reprints and permissions

About this article

Cite this article

Han , S., Liu , X., Han , JP. et al. Polymer thin-film transistors with high dielectric constant gate insulators. Appl Phys A 77, 873–875 (2003). https://doi.org/10.1007/s00339-003-2251-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-003-2251-0

Keywords

Search

Navigation