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Principles and applications of trans-wafer processing using a 2-μm thulium fiber laser

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Abstract

A self-developed nanosecond-pulsed thulium fiber laser operating at the wavelength λ = 2 μm was used to selectively modify the front and the back surfaces of various uncoated and metal-coated silicon and gallium arsenide wafers utilizing transparency of semiconductors at this wavelength. This novel processing regime was studied in terms of the process parameter variations, i.e., pulse energy and pulse duration, and the corresponding modification fluence thresholds were determined. The results revealed nearly debris-free back surface processing of wafers, in which modifications could be induced without affecting the front surfaces. The back surface modification threshold of Si was significantly higher than at the front surface due to non-linear absorption and aberration effects observed in experiments. A qualitative study of the underlying physical mechanisms responsible for material modification was performed, including basic analytical modeling and z-scan measurements. Multi-photon absorption, surface-enhanced absorption at nano- and microscopic defect sites, and damage accumulation effects are considered the main physical mechanisms accountable for consistent surface modifications. Applications of trans-wafer processing in removal of thin single- and multi-material layers from the back surface of Si wafers, both in single tracks and large areas, are presented.

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References

  1. Kumagai M, Uchiyama N, Ohmura E, Sugiura R, Atsumi K, Fukumitsu K (2007) Advanced dicing technology for semiconductor wafer—stealth dicing. IEEE Trans Semicond Manuf 20(3):259–265

    Article  Google Scholar 

  2. Ohmura E, Fukuyo F, Fukumitsu K, Morita H (2006) Internal modified-layer formation mechanism into silicon with nanosecond laser. J Achiev Mater Manuf Eng 17(1-2):381–384

    Google Scholar 

  3. Bärsch N, Körber K, Ostendorf A, Tönshoff KH (2003) Ablation and cutting of planar silicon devices using femtosecond laser pulses. Appl Phys A 77:237–242

    Google Scholar 

  4. Zorba V, Boukos N, Zergioti I, Fotakis C (2008) Ultraviolet femtosecond, picosecond and nanosecond laser microstructuring of silicon: structural and optical properties. Appl Opt 47(11):1846–1850

    Article  Google Scholar 

  5. Brown WL (1983) Laser processing of semiconductors. In: Bass M (ed) Laser materials processing. Elsevier, vol. 3, pp. 337--406

  6. Boulais E, Fantoni J, Chateauneuf A, Savaria Y, Meunier M (2011) Laser-induced resistance fine tuning of integrated polysilicon thin-film resistors. IEEE Trans Electron Devices 58(2):572–575

    Article  Google Scholar 

  7. Rapp L, Haberl B, Bradby JE, Gamaly EG, Williams JS, Rode AV (2014) Confined micro-explosion induced by ultrashort laser pulse at SiO2/Si interface. Appl Phys A 114:33–43

    Article  Google Scholar 

  8. Xu Z, Leong KH, Sanders PG (2000) Laser surface alloying of silicon into aluminum casting alloys. J Laser Appl 12(4):160–170

    Article  Google Scholar 

  9. Meseth M, Kunert BC, Bitzer L, Kunze F, Meyer S, Kiefer F, Dehnen M, Orthner H, Petermann N, Kummer M, Wiggers H, Harder N-P, Benson N, Schmechel R (2013) Excimer laser doping using highly doped silicon nanoparticles. Phys Status Solidi A 210(11):2456–2462

    Article  Google Scholar 

  10. Wang X, Shen ZH, Lu J, Ni XW (2010) Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes. J Appl Phys 108:033103

    Article  Google Scholar 

  11. Kuanr AV, Bansal SK, Srivastava GP (1996) Laser induced damage in GaAs at 1.06 μm wavelength: surface effects. Opt Laser Technol 28(1):25–34

    Article  Google Scholar 

  12. Lynn Smith J (1972) Surface damage of GaAs from 0.694 and 1.06 laser radiation. J Appl Phys 43:3399

    Article  Google Scholar 

  13. Qi H, Wang Q, Zhang X, Liu Z, Zhang S, Chang J (2011) Theoretical and experimental study of laser induced damage on GaAs by nanosecond pulsed irradiation. Opt Lasers Eng 49:285–291

    Article  Google Scholar 

  14. Hendow ST, Shakir SA (2010) Structuring materials with nanosecond laser pulses. Opt Express 18(10):10188

    Article  Google Scholar 

  15. Garg A, Kapoor A, Tripathi KN (2003) Laser-induced damage studies in GaAs. Opt Laser Technol 35:21–24

    Article  Google Scholar 

  16. Parsi Sreenivas VV, Bülters M, Bergmann RB (2012) Microsized subsurface modification of mono-crystalline silicon via non-linear absorption. J Eur Opt Soc Rapid Publ 7:12035

    Article  Google Scholar 

  17. Nejadmalayeri AH, Herman PR, Burghoff J, Will M, Nolte S, Tünnermann A (2005) Inscription of optical waveguides in crystalline silicon by mid-infrared femtosecond laser pulses. Opt Lett 30:964

    Article  Google Scholar 

  18. Verburg PC, Römer GRBE, Huis in ‘t Veld AJ (2014) Two-photon-induced internal modification of silicon by erbium-doped fiber laser. Opt Express 22(18):21958–21971

    Article  Google Scholar 

  19. Modsching N, Kadwani P, Sims RA, Leick L, Broeng J, Shah L, Richardson M (2011) Lasing in thulium-doped polarizing photonic crystal fiber. Opt Lett 36:3873

    Article  Google Scholar 

  20. Kadwani P, Jollivet C, Sims RA, Schülzgen A, Shah L, Richardson M (2012) Comparison of higher-order mode suppression and Q-switched laser performance in thulium-doped large mode area and photonic crystal fibers. Opt Express 20(22):24295–24303K

    Article  Google Scholar 

  21. Stutzki F, Jansen F, Jauregui C, Limpert J, Tünnermann A (2013) 2.4 mJ, “33 W Q-switched Tm-doped fiber laser with near diffraction-limited beam quality”. Opt Lett 38:99

    Article  Google Scholar 

  22. Gaida C, Gebhardt M, Kadwani P, Leick L, Broeng J, Shah L, Richardson M (2013) Amplification of nanosecond pulses to megawatt peak power levels in Tm3+-doped photonic crystal fiber rod. Opt Lett 38:691

    Article  Google Scholar 

  23. Liu JM (1982) Simple technique for measurements of pulsed Gaussian-beam spot sizes. Opt Lett 7:196

    Article  Google Scholar 

  24. Iwata H, Asakawa K (2008) Accumulative damage of GaAs and InP surfaces induced by multiple-laser-pulse irradiation. Jap J Appl Phys 47(4):2161–2167

    Article  Google Scholar 

  25. Meyer JR, Bartoli FJ, Kruer MR (1980) Optical heating in semiconductors. Phys Rev B 21(4):1559–1568

    Article  Google Scholar 

  26. Bristow AD, Rotenberg N, van Driel HM (2007) Two-photon absorption and Kerr coefficients of silicon for 850–2200 nm. Appl Phys Lett 90:191104

    Article  Google Scholar 

  27. Hurlbut WC, Lee Y-S, Vodopyanov KL, Kuo PS, Feyer MM (2006) Multi-photon absorption and nonlinear refraction of GaAs in the mid-infrared. Opt Lett 32:668

    Article  Google Scholar 

  28. Varshni YP (1967) Temperature dependence of the energy gap in semiconductors. Physica 34(1):149–154

    Article  Google Scholar 

  29. Jellison GE, Burke HH (1986) The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengths. J Appl Phys 60:841–843

    Article  Google Scholar 

  30. Klotzbach U, Mälzer S, Kuntze T, Panzner M, Dötschel M, Sonntag F, Beyer E (2004) Influence of gas on cutting silicon with solid state laser. Proc SPIE 5339:488–493

    Article  Google Scholar 

  31. Kruusing A (2010) Handbook of liquids-assisted laser processing. Elsevier

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Correspondence to Ilya Mingareev.

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Mingareev, I., Gehlich, N., Bonhoff, T. et al. Principles and applications of trans-wafer processing using a 2-μm thulium fiber laser. Int J Adv Manuf Technol 84, 2567–2578 (2016). https://doi.org/10.1007/s00170-015-7870-z

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  • DOI: https://doi.org/10.1007/s00170-015-7870-z

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