Abstract.
Recent developments in fabrication techniques and experimental design have allowed the observation of tunneling conductance between parallel quantum wires of very high quality, in GaAs heterostructures, using the cleaved edge overgrowth technique [1]. To a first approximation momentum is conserved during the tunneling process, except for a momentum boost, ħQ = Bed/c, produced by an applied magnetic field B perpendicular to the plane containing the two wires, where d is the separation between the wires. The differential tunnel conductance G = dI/dV is proportional to the spectral density for creating a hole in one wire and and electron in the other, with total momentum Q and energy E = eV, where V is the voltage difference between the two wires.
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Halperin, B.I. Tunneling Between Parallel Quantum Wires. Ann. Henri Poincaré 4 (Suppl 2), 633–635 (2003). https://doi.org/10.1007/s00023-003-0947-5
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DOI: https://doi.org/10.1007/s00023-003-0947-5