Abstract
The III–V compound semiconductors are widely used throughout the world (as well as in space) for a wide variety of electronic and optoelectronic devices. Recently, a strong commercial interest has developed in the use of the III–V nitrides for high-temperature electronics and visible (i.e., blue and green) light- emitting diodes and injection lasers. The luminescent properties of these materials are of critical importance. This article reports the results of a study on the room-temperature cathodoluminescence and photoluminescence for nominally undoped GaN films grown by low-pressure metalorganic chemical vapor deposition on (0001) oriented sapphire substrates.
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Grudowski, P.A., Holmes, A.L., Eiting, C.J. et al. The luminescence characteristics of GaN heteroepitaxial films. JOM 48, 46–49 (1996). https://doi.org/10.1007/BF03223027
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DOI: https://doi.org/10.1007/BF03223027