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Free electron laser induced two-photon photoconductivity in Hg1-xCdxTe

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Abstract

The Beijing free electron laser ( BFEL) has been employed for the first time to study the nonlinear photoconductivity characteristics of the typical infrared photoelectronic material Hg1-xCdxTe Taking advantage of the high photon flux density of BFEL, we have investigated the photoconductivity characteristics in Hg1-xCdx Te induced by two-photon absorption by means of the photoconductivity technique, observed the photoconductivity signals saturation, and studied the two-photon photoconductivity characteristics on different bias voltages across the sample.

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Author notes

  1. Xianzhang Yuan

    Present address: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China

Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083, Shanghai, China

    Wei Lu, Jun Jiang, Guosen Xu & Xuechu Shen

  2. Free Electron Laser Laboratory, lnstitute of High Energy Physics. Chinese Academy of Sciences, 100080, Beijing, China

    Mingkai Wang, Xueping Yang, Gang Wu & Yonggui Li

Authors
  1. Xianzhang Yuan
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  2. Wei Lu
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  3. Jun Jiang
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  4. Guosen Xu
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  5. Xuechu Shen
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  6. Mingkai Wang
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  7. Xueping Yang
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  8. Gang Wu
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  9. Yonggui Li
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Corresponding author

Correspondence to Xianzhang Yuan.

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Yuan, X., Lu, W., Jiang, J. et al. Free electron laser induced two-photon photoconductivity in Hg1-xCdxTe. Sci. China Ser. A-Math. 44, 1579–1584 (2001). https://doi.org/10.1007/BF02880797

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  • DOI: https://doi.org/10.1007/BF02880797

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