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Evaluation of Zn{N[Si(CH3)3]2}2 as ap-type dopant in OMVPE growth of ZnSe

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Abstract

We have grown nominally undoped ZnSe on GaAs from the precursors H2Se and Et2Zn. Replacement of Et2Zn by Zn[N(TMS)2]2 produced crystalline ZnSe of a lesser quality. Data indicate incorporation of nitrogen into the films when Et2Zn is utilized as the main zinc source with Zn[N(TMS)2]2 being introduced at dopant levels. Characterization techniques employed include NMR, XRD, SIMS, SEM, PL, RGA, GC/MS, and Raman spectroscopy.

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Authors and Affiliations

  1. Department of Chemistry and Materials Research and Technology Center, The Florida State University, 32306-3006, Tallahassee, FL

    W. S. Rees & D. M. Green

  2. Department of Chemical Engineering, University of Florida, 32611-2022, Gainesville, FL

    T. J. Anderson, E. Bretschneider, B. Pathangey, C. Park & J. Kim

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  1. W. S. Rees
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  2. D. M. Green
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Rees, W.S., Green, D.M., Anderson, T.J. et al. Evaluation of Zn{N[Si(CH3)3]2}2 as ap-type dopant in OMVPE growth of ZnSe. J. Electron. Mater. 21, 361–366 (1992). https://doi.org/10.1007/BF02660467

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  • DOI: https://doi.org/10.1007/BF02660467

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