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Electrical and structural properties of GeMoW ohmic contact to an In0.5Ga0.5As cap layer on n-Type GaAs

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Abstract

The results of electrical and structural characterization of a GeMoW ohmic contact to n-type GaAs with a 100Å thick, In0.5Ga0.5As cap layer are presented. Electrical characterization demonstrates ohmic behavior over a wide annealing temperature range from 300 to 700°C. A minimum contact resistance of 0.176 Ω-mm was measured after furnace annealing at 500°C. The contact resistance is also insensitive to anneal time at 500°C. Structural characterization using secondary ion mass spectroscopy, Auger electron spectroscopy, and x-ray diffraction indicates excess In as a potential cause of increased contact resistance following 700°C annealing.

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Merkel, K.G., Bright, V.M., Schauer, S.N. et al. Electrical and structural properties of GeMoW ohmic contact to an In0.5Ga0.5As cap layer on n-Type GaAs. J. Electron. Mater. 23, 991–996 (1994). https://doi.org/10.1007/BF02655375

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  • DOI: https://doi.org/10.1007/BF02655375

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