Abstract
Memory-quality silicon nitride has been deposited using plasma-enhanced chemical vapor deposition (PECVD). Film composition was varied by controlling the nitrogen concentration of the reactant gases. The effects of the source and content of the nitriding agent on the physical properties of the film were studied using ellipsometry and ultraviolet (UV), fourier transform infrared (FTIR) and Auger electron spectroscopy. Refractive index of the films varied from 1.77 to 1.95 corresponding to Si/N ratios of 0.75 to 1.03. Ultraviolet spectroscopy yielded band edge values of 4.9 to 2.2 eV depending on the Si/N ratio. Window size, endurance and retention performance is comparable to that reported for both atmospheric- and low-pressure chemical vapor deposited films. A strong correlation between the Si-H bond concentration and the memory performance was observed. Although some excess silicon in the film is needed for memory operation in a metal-nitride-oxide-silicon (MNOS) structure, excessive amounts result in low breakdown fields, small memory windows and poor retention characteristics.
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This work was supported by a grant from the National Science Foundation.
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Khaliq, M.A., Shams, Q.A., Brown, W.D. et al. Physical properties of memory quality PECVD silicon nitride. J. Electron. Mater. 17, 355–359 (1988). https://doi.org/10.1007/BF02652118
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DOI: https://doi.org/10.1007/BF02652118