Abstract
Post-growth annealing is shown to improve the laser diode quality of GaAs/AlGaAs graded-index separate confinement heterostructure quantum well laser diode structures grown at a nonoptimal substrate temperature lower than 680°C by molecular beam epitaxy. Reduction by a factor of up to three in the threshold current was accompanied by a reduction in the interface trap density. The reduced threshold current is still higher than that of laser diodes grown at the optimal temperatures which are between 680 and 695°C. The improvement in laser diode performance is ascribed to the reduction of interface nonradiative recombination centers.
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References
W.T. Tsang, inThe Technology and Physics of Molecular Beam Epitaxy,ed. E.H.C.Parker, (Plenum, New York, 1985), p. 467.
K. Xie, C.R. Wie, J.A. Varriano and G.W. Wicks,Appl. Phys. Lett. 60, 428(1992).
S.V. Iyer, H.P. Meier, Shlomo Ovadia, C. Parks, D.J. Arent and W. Walter,Appl. Phys. Lett. 60, 416 (1992).
N. Chand,S.N.G. Chuand J.S. Jordan,J. Vac. Sci. Technol. B. 10, 807 (1992).
T.N. Miller and T.S. Low,J. Cryst. Growth 111, 30 (1991).
C. Weisbuch, R. Dingle, P.M. Petroff, A.C. Gossard and W. Wiegmann,Appl. Phys. Lett. 38, 840 (1981).
N. Yamada, G. Roos and J.S. Harris, Jr.,Appl. Phys. Lett. 59, 1040 (1991).
G. Zhang, J. Nappi, A. Ovtchinnikov, H. Asonen and M. Pessa,J. Appl. Phys. 72, 3788 (1992).
D.V. Lang, L.C. Kimerling and S.Y. Leung,J. Appl. Phys. 47, 3587 (1976).
R.C. Miller, W.T. Tsang and O. Munteanu,Appl. Phys. Lett. 41, 374 (1982).
P.M. Petroff, R.C. Miller, A.C. Gossard and W. Wiegmann,Appl. Phys. Lett. 44, 217 (1984).
K.L. Tan, M.S. Lundstrom and M.R. Melloch,Appl Phys. Lett. 48, 428 (1986).
B. Sermage, F. Alexandre, J. Beerens and P. Tronc,Superlattices and Microstruct. 6, 373 (1989).
N. Chand, A.S. Jordan, S.N.G. Chu and M. Geva,Appl. Phys. Lett. 59, 3270 (1992).
R.H. Wallis,Inst. Phys. Conf. Ser. 56, 73 (1981).
S.J. Pearton, M.P. Iannuzzi, C.L. Reynolds, Jr. and L. Peticolas,Appl. Phys. Lett. 52, 395 (1988).
K. Yamanka, S. Naritsuka, K. Kanamoto, M. Mihara and M. Ishii,J. Appl. Phys. 61, 5062 (1987).
S. Dannefaer and D. Kerr,J. Appl. Phys. 60, 591 (1986).
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Xie, K., Wie, C.R., Varriano, J.A. et al. Improvement of GaAs/AlGaAs quantum well laser diodes by rapid thermal annealing. J. Electron. Mater. 23, 1–6 (1994). https://doi.org/10.1007/BF02651259
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DOI: https://doi.org/10.1007/BF02651259