Abstract
Design of monolithic low-noise amplifiers in bipolar and CMOS technologies for matching a given signal source is presented. Noise matching conditions are derived for three different types of source impedance, i.e., resistive, capacitive, and inductive. Emphasis is put on the comparison of the best noise performance obtainable by the use of bipolar and CMOS approaches. It is shown that for a resistive source, low-noise amplifiers can easily be designed in both bipolar and CMOS technologies. While for capacitive and inductive sources, a CMOS approach yields better noise performance than a bipolar one. Measurement and simulation results on some amplifiers are presented which confirm the theoretical considerations.
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Steyaert, M., Chang, Z.Y. & Sansen, W. Low-noise monolithic amplifier design: Bipolar versus CMOS. Analog Integr Circ Sig Process 1, 9–19 (1991). https://doi.org/10.1007/BF02151022
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DOI: https://doi.org/10.1007/BF02151022