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Magnetoresistance in two-dimensional magnesium films of various thicknesses

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Zeitschrift für Physik B Condensed Matter

Abstract

The magnetoresistance of thin magnesium films in the weakly localized regime has been measured at 4.2 K as a function of film thickness. The results are analysed in a new and simple way based on the theory of Hikami et al. [1]. We use only two adjustable parameters, the inelastic relaxation time τ i and the spin-orbit scattering time τso. Whereas τso is found to be almost independent of thickness, τ i changes significantly. The variation of τ i with thickness is discussed in the light of the theories for the enhanced electron-electron interaction, but it does not seem to tie up with any of the existing theories.

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Authors and Affiliations

  1. Physics Laboratory I, H.C. Ørsted Institute, University of Copenhagen, Universitetsparken 5, DK-2100, Copenhagen Ø, Denmark

    P. E. Lindelof, J. Nørregaard & J. Bindslev Hansen

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  1. P. E. Lindelof
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  2. J. Nørregaard
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  3. J. Bindslev Hansen
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Lindelof, P.E., Nørregaard, J. & Hansen, J.B. Magnetoresistance in two-dimensional magnesium films of various thicknesses. Z. Physik B - Condensed Matter 59, 423–428 (1985). https://doi.org/10.1007/BF01328852

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  • DOI: https://doi.org/10.1007/BF01328852

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