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Ferroelectric field effect in SrCuO2 and SrRuO3 films

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Abstract

We report on ferroelectric field effect experiments on Pb(Zr0.52Ti0.48)O3/SrCuO2 and Pb(Zr0.52Ti0.48)O3/SrRuO3 epitaxial heterostructures with an emphasis on the material characterization. Upon reversing the polarization of the Pb(Zr0.52Ti0.48)O3 ferroelectric layer, we measured a nonvolatile change in the resistivity of ultrathin layers of SrCuO2 and SrRuO3. In thin SrRuO3 films (30 Å) up to a 9% resistivity change has been observed at room temperature.

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Authors and Affiliations

  1. DPMC University of Geneva, 24 Quai E.-Ansermet, 1211, Geneva 4, Switzerland

    C. H. Ahn, L. Antognazza, T. Tybell, K. Char, M. Decroux, R. H. Hammond, T. H. Geballe, M. R. Beasley, Ø. Fischer & J. -M. Triscone

  2. Dept. of Applied Physics, Stanford University, 94305, Stanford, CA, USA

    C. H. Ahn, R. H. Hammond, T. H. Geballe & M. R. Beasley

  3. Conductus Inc., 969 W. Maude Ave., 94086, Sunnyvale, CA, USA

    L. Antognazza & K. Char

Authors
  1. C. H. Ahn
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  2. L. Antognazza
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  3. T. Tybell
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  4. K. Char
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  5. M. Decroux
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  6. R. H. Hammond
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  7. T. H. Geballe
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  8. M. R. Beasley
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  9. Ø. Fischer
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  10. J. -M. Triscone
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Ahn, C.H., Antognazza, L., Tybell, T. et al. Ferroelectric field effect in SrCuO2 and SrRuO3 films. J Low Temp Phys 105, 1517–1522 (1996). https://doi.org/10.1007/BF00753915

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  • DOI: https://doi.org/10.1007/BF00753915

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