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Reduction of the dislocation density for GaAs thin films on Si substrates grown by molecular beam epitaxy using the two-step growth method

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Woo, Y.D., Lee, H.I., Kang, T.W. et al. Reduction of the dislocation density for GaAs thin films on Si substrates grown by molecular beam epitaxy using the two-step growth method. J Mater Sci Lett 14, 1340–1343 (1995). https://doi.org/10.1007/BF00270721

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  • DOI: https://doi.org/10.1007/BF00270721

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