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Microstructural examination of extended crystal defects in silicon selective epitaxial growth

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Abstract

Selective epitaxial growth has been used to produce electronically isolated devices. The oxide/silicon interfaces in such materials are often associated with regions of poor device performance. In this study, the extended defects in the bulk near interfacial regions are examined by transmission electron microscopy. Process modifications suggest a large portion of the defects were due to thermal expansion mismatch and can be avoided.

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Authors and Affiliations

  1. School of Materials Engineering, School of Electrical Engineering, USA

    H. Yen & E. P. Kvam

  2. Purdue University, 47907, West Lafayette, IN, USA

    R. Bashir & G. W. Neudeck

Authors
  1. H. Yen
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  2. E. P. Kvam
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  3. R. Bashir
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  4. G. W. Neudeck
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Yen, H., Kvam, E.P., Bashir, R. et al. Microstructural examination of extended crystal defects in silicon selective epitaxial growth. J. Electron. Mater. 22, 1331–1339 (1993). https://doi.org/10.1007/BF02817696

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  • DOI: https://doi.org/10.1007/BF02817696

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