Abstract
Precision lattice parameter measurements have been made for various dopants as a function of doping concentration in order to provide a basis for understanding the reduction in dislocation density in heavily doped crystals. For the two dopants, Zn and S, which most effectively reduce the dislocation density, a monotonic decrease in lattice parameter with concentration is found for concentrations up to the mid 1018 cm-3 level. On the other hand, a slight increase in lattice parameter is found for doping with tin which dose not reduce the dislocation density.
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Sugii, K., Koizumi, H. & Kubota, E. Precision lattice parameter measurements on doped indium phosphide single crystals. J. Electron. Mater. 12, 701–712 (1983). https://doi.org/10.1007/BF02676797
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DOI: https://doi.org/10.1007/BF02676797