Abstract
We report the first growth and characterization of high gain double heterojunction NpN HBTs on InP with a lattice-matched GaAs5Sb5 base layer. This AllnAs/GaAsSb heterojunction has almost no discontinuity in the conduction band edge, eliminating the need to grade the emitter-to-base heterojunction to achieve optimal carrier injection. The layers were grown in a solid source MBE system, using tetramer As4 and Sb4 sources. Be is an efficient acceptor in the GaAsSb, but the mobility is about half that measured inp type GaAs on GaAs substrates. The HBTs fabricated were large area mesa isolated transistors, with a beta of 80 at a current density of 2 kA/cm2, and the gain remained high at lower current densities. The turnon voltage,V be, is only 0.45 V at a current density of 2 A/cm2.
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