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Growth and characterization of digital alloy quantum wells of CdSe/ZnSe

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Abstract

We report a study of digital alloy quantum wells of CdSe/ZnSe grown by migration enhanced epitaxy. The quantum well regions consist of various numbers of periods of one monolayer of CdSe and three monolayers of ZnSe, and the barriers are ZnSe. It will be shown that the optical properties of such quantum wells are greatly affected by the structural quality of the digital alloy. Both structural and optical properties will be discussed. Such digital alloy quantum wells are shown to have excellent room temperature optical characteristics.

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Authors and Affiliations

  1. Department of Physics, University of Notre Dame, 46556, Notre Dame, IN

    H. Luo, N. Samarth, A. Yin, A. Pareek, M. Dobrowolska & J. K. Furdyna

  2. School of Materials Engineering, Purdue University, 47907, West Lafayette, IN

    K. Mahalingam & N. Otsuka

  3. Department of Physics, Goshen College, 46556, Goshen, IN

    F. C. Peiris & J. R. Buschert

Authors
  1. H. Luo
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  2. N. Samarth
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  3. A. Yin
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  4. A. Pareek
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  5. M. Dobrowolska
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  6. J. K. Furdyna
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  7. K. Mahalingam
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  8. N. Otsuka
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  9. F. C. Peiris
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  10. J. R. Buschert
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Luo, H., Samarth, N., Yin, A. et al. Growth and characterization of digital alloy quantum wells of CdSe/ZnSe. J. Electron. Mater. 22, 467–471 (1993). https://doi.org/10.1007/BF02661615

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  • DOI: https://doi.org/10.1007/BF02661615

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