Abstract
Large p-type TlInSe2, TlInTe2, and TlGaTe2 single crystals have been grown by the Bridgman-Stockbarger method, starting from stoichiometric melts. The first observations of the switching process in p-type TlGaTe2 single crystal are reported. Current-voltage (I-V) characteristics of symmetrical In/p-TlInSe2/In, In/p-TlInTe2/In, and In/p-TlGaTe2/In structures exhibit two distinct regions: an ohmic region at low current densities and nonlinear regions (S-shape) having negative differential resistance (NDR) at moderate and higher current densities. An electrothermal model was used to explain the nonlinear behavior. The nonlinear behavior of the I–V curves was studied at different ambient temperatures in the 100–340K region; the sample temperature and the threshold voltage of the NDR region were examined as a function of the current density and the ambient temperature, respectively. The electrothermal model is a satisfactory explanation.
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Abay, B., Gürbulak, B., Yildirim, M. et al. Electrothermal investigation of the switching effect in p-Type TllnSe2, TllnTe2, and TIGaTe2 chain chalcogenide semiconductors. J. Electron. Mater. 25, 1054–1059 (1996). https://doi.org/10.1007/BF02659902
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DOI: https://doi.org/10.1007/BF02659902