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An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium

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Abstract

An analytical study of the impurities in trimethylgallium (TMGa) and subsequent correlation of the effect of these impurities on resulting GaAs films grown by metalorganic chemical vapor deposition (MOCVD) is presented. The effects of using fractional distillation techniques to improve the quality of TMGa and to help isolate and identify major source impurities in TMGa is detailed. Photothermal ionization data are presented which show the residual donor species present and their relative concentrations in the epitaxial layers. Correlations of the residual donor concentrations with TMGa preparation are made. It is demonstrated that high purity GaAs with μ77 K ≈ 125,000 cm2/V-sec can be grown by MOCVD using repurified trimethylgallium and arsine source materials.

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References

  1. H. M. Manasevit and W. I. Simpson, J. Electrochem. Soc.116 1725 (1969).

    Article  CAS  Google Scholar 

  2. R. D. Dupuis, P. D. Dapkus, R. D. Yingling and L. À. Moudy, Appl. Phys. Lett.31, 201 (1977).

    Article  CAS  Google Scholar 

  3. N. J. Nelson, K. K. Johnson, R. L. Moon, H. A. Vander Plas and L. W. James, Appl. Phys. Lett.33, 26 (1978).

    Article  CAS  Google Scholar 

  4. R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett.31, 466 (1977).

    Article  CAS  Google Scholar 

  5. R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett.32, 437 (1978).

    Article  Google Scholar 

  6. E. J. Thrush and J. E. A. Whiteaway, in: Proc. 8th Intern. Symp on GaAs and Related Compounds, Vienna, 1980. Inst. Phys. Conf. Ser. 56 (Inst. Phys., London, 1981), p. 337.

    Google Scholar 

  7. R. D. Dupuis, Appl. Phys. Lett.35, 311 (1979).

    Article  CAS  Google Scholar 

  8. R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett.32, 473 (1978).

    Article  CAS  Google Scholar 

  9. R. D. Dupuis, P. D. Dapkus, N. Hlonyak, Jr., E. A. Rezek and R. Chin, Appl. Phys. Lett.33, 596 (1978).

    Article  CAS  Google Scholar 

  10. R. D. Dupuis, P. D. Dapkus, R. M. Kolbas and N. Holonyak, Jr., Solid State Commun.27, 531 (1978).

    Article  CAS  Google Scholar 

  11. J. J. Coleman and P. D. Dapkus, Appl. Phys. Lett.37, 15 (1980).

    Article  CAS  Google Scholar 

  12. R. D. Dupuis, P. D. Dapkus, N. Hlonyak, Jr., E. A. Rezek, and P. Chin, Appl. Phys. Lett.32, 295 (1978).

    Article  CAS  Google Scholar 

  13. T. Shino, S. Yanagauki, Y. Yamada, K. Aral, K. Kamei, T. Chigira, and T. Nakanisi, Electron. Lett.17, 738 (1981).

    Article  CAS  Google Scholar 

  14. K. Kamei, H. Kawasaki, T. Chigira, T. Nakanisi, K. Kawabuchi, and M. Yoshimi, Electron. Lett.17, 450 (1981).

    Article  CAS  Google Scholar 

  15. H. M. Manasevit, P. D. Dapkus, K. L. Hess, and J. J. Yang, 22nd Annual Electron. Mater. Conf., Ithaca, N.Y., 1980.

  16. Y. Seki, K. Tanno, K. Iida, and E. Ichiki, J. Electrochem. Soc.122, 1108 (1975).

    Article  CAS  Google Scholar 

  17. T. Nakanisi, T. Udagawa, A. Tanaka, and K. Kamei, J. Crystal Growth55, 255 (1981).

    Article  CAS  Google Scholar 

  18. G. B. Stringfellow and G. Hom, Appl. Phys. Lett.34, 794 (1981).

    Article  Google Scholar 

  19. G. B. Stringfellow, H. T. Hall, Jr. and J. Electron. Mater.8, 201 (1979).

    CAS  Google Scholar 

  20. P. D. Dapkus, H. M. Manasevit, K. L. Hess, T. S. Low, and G. E. Stillman, J. Crystal Growth55, 10 (1981).

    Article  CAS  Google Scholar 

  21. G. E. Stillman and C. M. Wolfe, inSemiconductors and Semimetals, Vol. 12 edited by R. K. Willardson and A. C. Beer, (Academic Press 1977), pp. 169–290.

  22. C. M. wolfe, private communication, 1979.

  23. C. M. Wolfe, G. E. Stillman and D. M. Korn, in: Proc. Symp. on GaAs and Related Compounds, St. Louis, 1976, (Inst. Phys., London, 1977) p. 120–128.

    Google Scholar 

  24. T. S. Low, G. E. Stillman, C. M. Wolfe, Proc. Sym. GaAs and Related Compounds, Oiso, 1981 (to be published).

  25. R. A. Cooke, R. A. Hoult, R. F. Kirkman, R. A. Stradling, J. Phys. D: Appl. Phys. vol.11, 945 (1978).

    Article  CAS  Google Scholar 

  26. M. Ozeki, K. Kitahara, K. Nakai, A. Shibatomi, K. Dazai, S. Okawa and O. Ryuzan, Japan, J. App. Phys.16, 1617 (1977).

    Article  CAS  Google Scholar 

  27. H. H. M. Stoelenga, D. M. Larsen, W. Walukiewcz and C. O. Bozler, J. Phys. Chem. Solids,39, 873 (1978).

    Article  Google Scholar 

  28. M. N. Asfar, K. J. Button, G. L. McCoy, Proc. Sym. GaAs and Related Compounds, 1980 (Inst. of Physics, London) pp. 547–555.

    Google Scholar 

  29. D. J. Ashen, P. J. Dean, D. T. J. Hurle, J. O. Mullin, A. M. White, and P. D. Greene, J. Phys. Chem. Solids,36, 1041 (1975).

    Article  CAS  Google Scholar 

  30. C. M. Wolfe, G. E. Stillman, and J. O. Dimmock, J. Appl. Phys.41, 504 (1970).

    Article  CAS  Google Scholar 

  31. D. M. Larsen, Phys. Rev. B,13, 1681 (1976).

    Article  CAS  Google Scholar 

  32. Y. G. Chai, R. Chow, and C. E. C. Wood, Appl. Phys. Lett.39, 800 (1981).

    Article  CAS  Google Scholar 

  33. I. Teramoto, J. Phys. Chem. Solids,33, 2089 (1972).

    Article  CAS  Google Scholar 

  34. T. S. Low, G. E. Stillman, D. M. Collins, C. M. Wolfe, S. Tiwari and L. F. Easton, Appl. Phys. Lett, 1 April 1982 (to he published).

  35. T. S. Low, G. E. Stillman (unpublished).

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Authors and Affiliations

  1. Microelectronic Research and Development Center, Rockwell International, 91360, Thousand Oaks, CA

    K. L. Hess, P. D. Dapkus & H. M. Manasevit

  2. Department of Electrical Engineering, University of Illinois, 61801, Urbana, IL

    T. S. Low, B. J. Skromme & G. E. Stillman

  3. Rockwell International/Microelectronics Research and Development Center, 92803, Anaheim, CA

    H. M. Manasevit

Authors
  1. K. L. Hess
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  2. P. D. Dapkus
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  3. H. M. Manasevit
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  4. T. S. Low
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  5. B. J. Skromme
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  6. G. E. Stillman
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Additional information

Work supported in part by the U.S. Naval Research Laboratory on Contract No. N00173-80-C-0066.

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Hess, K.L., Dapkus, P.D., Manasevit, H.M. et al. An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium. J. Electron. Mater. 11, 1115–1137 (1982). https://doi.org/10.1007/BF02658919

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  • DOI: https://doi.org/10.1007/BF02658919

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