Abstract
The conduction band alignment of compressively strained In1−xGaxP relative to lattice matched InGaP/GaAs has been determined by capacitance-voltage profil-ing. A modified version of Kroemer’s capacitance-voltage profiling method is developed wherein a quantum well is profiled instead of a single heterojunction. A one-dimensional Poisson-Schrodinger solver was used to fit the reconstructed carrier profiles corresponding to a value of ΔEc at varying temperatures. Schottky barrier diode structures containing a single strained InGaP quantum well were grown by low pressure metalorganic chemical vapor deposition. The two strained compositions studied contained 35 and 31% gallium. Conduction band offsets of 101 and 131 meV were found for the 35 and 31% samples, respectively, with an estimated accuracy of ±5 meV. These results agreed closely with values predicted by empirical calculations.
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Park, S.H., M., M., Yu, P. et al. Conduction band offset of strained InGaP by quantum well capacitance-voltage profiling. J. Electron. Mater. 24, 1381–1386 (1995). https://doi.org/10.1007/BF02655452
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DOI: https://doi.org/10.1007/BF02655452