Abstract
Thin films of InAs have been deposited on mica substrates through a vacuum evaporation technique by means of controlling the substrate and source temperatures. The films with large crystal grain were found to have the best electrical properties. The maximum electron mobility of 12, 400 cm2/V·sec at room temperature was obtained in an undoped film of 3 Μm thickness at a donor concentration of 3.5 × 1016 cm−3. The temperature dependence of both electron mobility and resistivity of these films was slightly lower than those reported for bulk crystal type InAs.
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Okimura, H., Kannewurf, C.R. & Brittain, J.O. Preparation and electrical properties of inas thin films. J. Electron. Mater. 7, 627–637 (1978). https://doi.org/10.1007/BF02655438
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DOI: https://doi.org/10.1007/BF02655438