Abstract
2-dimensional electrons in GaAs has a strong spin-orbit interaction, which leads to anti-localisation. The origin of this spin-orbit effect in GaAs lies in the band structure, where an intrinsic spin splitting is rooted in the lack of inversion symmetry. The weak localization at small magnetic fields clearly shows this. We have studied this experimentally at various temperatures in 2 different MBE grown GaAlAs/GaAs structures: A triangular 100 oriented quantum well and a symmetrical 100 oriented quantum well.
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Pedersen, S., Hassenkam, T. & Lindelof, P.E. Weak anti-localisation in 2-D 100-electron gases in GaAS. Czech J Phys 46 (Suppl 5), 2523–2524 (1996). https://doi.org/10.1007/BF02570248
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DOI: https://doi.org/10.1007/BF02570248