Abstract
Both occupied and unoccupied electronic states of TiSi2 have been studied by a variety of electron and X-ray spectroscopies as well by electronic structure calculations. The data allows us to build up a detailed picture of the site and symmetry selected, partial densities of states. We show that the metald states contribute to silicide chemical bonding, by distortion of the Sip state distribution. We also point out evidence that the Sis states give a significant contribution to the chemical bonding.
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Weijs, P.J.W., Czyżyk, M.T., Fuggle, J.C. et al. Electronic structure and bonding properties in TiSi2 . Z. Physik B - Condensed Matter 78, 423–430 (1990). https://doi.org/10.1007/BF01313324
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DOI: https://doi.org/10.1007/BF01313324