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Photopleochromism and the physical principles of the preparation of semiconductor polarimetric photodetectors

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Conclusions

In conclusion, we point out that II-IV-V2 semiconductors with the chalcopyrite lattice have served as the object of fundamental studies of the polarization photosensitivity performed in recent years and the physical principles for creating semiconductor photodetectors of a new type have been formulated. One can hope that the basic laws governing the photopleochroism of diamond-like semiconductors, determined for single crystals and different diode structures consisting of II-IV-V2 compounds, will be quite general and will find application to anisotropic materials belonging to different crystalline classes. It is of interest to construct a general theory of the polarization photosensitivity of uniform crystals and potential barriers. It is desirable to develop further the technology for growing single crystals of anisotropic semiconductors with the required crystallographic orientation.

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  1. A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, USSR

    Yu. V. Rud'

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Translated from Izvetiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 68–83, August, 1986.

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Rud', Y.V. Photopleochromism and the physical principles of the preparation of semiconductor polarimetric photodetectors. Soviet Physics Journal 29, 638–650 (1986). https://doi.org/10.1007/BF00894032

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