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670 nm AlGaInP/GaInP strained multi-quantum well laser diode with high characteristic temperature (T 0)

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Abstract

A 670 nm AlGaInP/GaInP strained multi-quantum well laser diode with a high characteristic temperature (T 0) has been achieved by optimization of quantum well structures and the metal-organic chemical vapour deposition process. The hole concentration of 5×1017 cm-3 in the p-AlGaInP cladding layer on a (100) 5° off GaAs substrate has been obtained with very small ratio, 0.35, of mole flow rate of zinc source to the group III sources ([DEZn]/[III]) of 0.35. The threshold current and maximum temperature for continuous wave operation of lasers with cavity length of 300 μm have been measured as 45 mA and 80°C, respectively. The characteristic temperature (T 0) of the lasers has been measured as high as 153 K. The laser without facet protections could operate for more than 1000 h at 50°C and 5 mW.

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Authors and Affiliations

  1. LG Electronics Research Center, 16 Woomyeon-Dong, Seocho-Gu, 137-140, Seoul, Korea

    Jong-Seok Kim, Min Yang, Won-Jin Choi, Ji-Ho Chang, In-Seong Cho, Won-Taek Choi & Tae-Kyung Yoo

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  1. Jong-Seok Kim
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  2. Min Yang
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  3. Won-Jin Choi
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  4. Ji-Ho Chang
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  6. Won-Taek Choi
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Kim, JS., Yang, M., Choi, WJ. et al. 670 nm AlGaInP/GaInP strained multi-quantum well laser diode with high characteristic temperature (T 0). Opt Quant Electron 27, 435–440 (1995). https://doi.org/10.1007/BF00563580

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  • DOI: https://doi.org/10.1007/BF00563580

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