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Electron beam lithography (often abbreviated as e-beam lithography or EBL) is the process of transferring a pattern onto the surface of a substrate by first scanning a thin layer of organic film (called resist) on the surface by a tightly focused and precisely controlled electron beam (exposure) and then selectively removing the exposed or nonexposed regions of the resist in a solvent (developing). The process allows patterning of very small features, often with the dimensions of submicrometer down to a few nanometers, either covering the selected areas of the surface by the resist or exposing otherwise resist-covered areas. The exposed areas could be further processed for etching or thin-film deposition while the covered parts are protected during these processes. The advantage of e-beam lithography stems from the shorter wavelength of accelerated electrons compared to the wavelength of ultraviolet (UV) light used in photolithography, which...
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References
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Pala, N., Karabiyik, M. (2012). Electron Beam Lithography (EBL). In: Bhushan, B. (eds) Encyclopedia of Nanotechnology. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-9751-4_344
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