Abstract
We report on a systematic investigation of defects generated during the epitaxial growth of cubic SiC on (001)Si substrates. The SiC films were grown exactly on the [100] axis of the Si and on vicinal surfaces with an off-axis tilt of two and four degrees. Low temperature photoluminescence and transmission electron microscopy data related to the defects generated during growth are obtained for the three substrate orientations.
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Work supported in part by NASA Grant NAG-3-603
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© 1989 Springer-Verlag Berlin, Heidelberg
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Choyke, W.J., Powell, J.A., Cheng, T.T., Pirouz, P. (1989). Photoluminescence and Transmission Electron Microscopy of Defects in SiC Grown on Si. In: Rahman, M.M., Yang, C.YW., Harris, G.L. (eds) Amorphous and Crystalline Silicon Carbide II. Springer Proceedings in Physics, vol 43. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-75048-9_25
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DOI: https://doi.org/10.1007/978-3-642-75048-9_25
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-75050-2
Online ISBN: 978-3-642-75048-9
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