Abstract
Electroforming of an Al/Al2O3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current–voltage characteristics and non–volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x1017 /cm2. It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.
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Chen, Q., Gomes, H.L., Kiazadeh, A., Rocha, P.R.F., De Leeuw, D.M., Meskers, S.C.J. (2012). Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories. In: Camarinha-Matos, L.M., Shahamatnia, E., Nunes, G. (eds) Technological Innovation for Value Creation. DoCEIS 2012. IFIP Advances in Information and Communication Technology, vol 372. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-28255-3_58
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DOI: https://doi.org/10.1007/978-3-642-28255-3_58
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