Abstract
This chapter reviews the characteristics of SOI ridge waveguide birefringence, as governed by the waveguide cross-section geometry, the cladding stress level, and cladding thickness. Typical stress levels in dielectric cladding films such as silicon dioxide and silicon nitride are such that the stress-induced birefringence is of comparable magnitude to the waveguide geometrical birefringence. Therefore the total waveguide birefringence can be precisely controlled by counter-balancing these two factors. The application of this technique for achieving polarization independence in a variety of photonic components is described, as well as an example of polarization splitting. Passive and active tuning of the stress-induced birefringence is discussed. The use of birefringence tuning to enhance the efficiency in optical parametric processes and stress-induced Pockels electro-optic effect are also briefly addressed.
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Acknowledgments
The author gratefully acknowledges Dr. Siegfried Janz, Dr. Winnie Ye, Dr. Pavel Cheben, Dr. André Delâge, and Dr. Philip Waldron for their collaboration through out this work, and for many insightful discussions and suggestions in preparing this manuscript. The contribution of Dr. Winnie Ye during her Ph.D. thesis work is particularly recognized. Acknowledgments are also due to Dr. Juan Caballero, Dr. Dan Dalacu, Dr. Boris Lamontagne, Ms. Marie-Josée Picard, and Ms. Edith Post for their contribution in device fabrication and testing. The author also acknowledges the Institute for Microstructual Sciences, National Research Council Canada, for providing the opportunity and facilities to carry out this research.
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Xu, DX. (2011). Polarization Control in Silicon Photonic Waveguide Components Using Cladding Stress Engineering. In: Lockwood, D., Pavesi, L. (eds) Silicon Photonics II. Topics in Applied Physics, vol 119. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-10506-7_2
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