Abstract
The scaling of CMOS technology has followed Moore’s Law for more than five decades [1], enabling the continuous growth of the semiconductor industry. This trend, however, currently faces a major challenge due to increasing energy dissipation per unit area [2]. The increase in power dissipation results from the increase of static (standby) leakage power, as well as the continued increase of density as transistors are scaled down [3]. The former is a result of the fact that power needs to be continuously applied to CMOS elements in order for them to retain their information. In addition, the dynamic switching energy per unit area has also been increasing due to the increase of device density. The search for novel low-dissipation solutions at the device-, circuit- and system-levels is thus critical to the future of the electronics industry.
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References
G.E. Moore, Cramming more components onto integrated circuits. Electron. Mag. 38, 114–117 (1965)
International technology roadmap for semiconductors, (ed.), 2005
T.N. Theis, P.M. Solomon, In quest of the “next switch”: prospects for greatly reduced power dissipation in a successor to the silicon field-effect transistor. Proc. IEEE 98, 2005–2014 (2010)
S.A. Wolf et al., Spintronics: a spin-based electronics vision for the future. Science 294, 1488–1495 (2001)
D.A. Allwood et al., Magnetic domain-wall logic. Science 309, 1688–1692 (2005)
R.P. Cowburn, M.E. Welland, Room temperature magnetic quantum cellular automata. Science 287, 1466–1468 (2000)
A. Khitun et al., Magnonic logic circuits. J. Phys. D 43, 264005 (2010)
F.B. Ren, D. Markovic, True energy-performance analysis of the MTJ-based logic-in-memory architecture (1-bit full adder). IEEE Trans. Electron Devices 57, 1023–1028 (2010)
P. Shabadi et al., Spin wave functions nanofabric update, in 2011 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) (2011), pp. 107–113
A. Khitun, K.L. Wang, Non-volatile magnonic logic circuits engineering. J. Appl. Phys. 110, 034306 (2011)
S. Matsunaga et al., Fabrication of a nonvolatile full adder based on logic-in-memory architecture using magnetic tunnel junctions. Appl. Phys. Exp. 1 (2008)
S.Y. Lee et al., A full adder design using serially connected single-layer magnetic tunnel junction elements. IEEE Trans. Electron Devices 55, 890–895 (2008)
K.L. Wang, P.K. Amiri, Non-volatile spintronics: perspectives on instant-on nonvolatile nanoelectronic systems. Spin 02, 1250009 (2012)
B. Behin-Aein et al., Proposal for an all-spin logic device with built-in memory. Nat. Nanotechnol. 5, 266–270 (2010)
T. Dietl, H. Ohno, Dilute ferromagnetic semiconductors: physics and spintronic structures. Rev. Mod. Phys. 86, 187–251 (2014)
T. Dietl, A ten-year perspective on dilute magnetic semiconductors and oxides. Nat. Mater. 9, 965–974 (2010)
H. Ohno, Making nonmagnetic semiconductors ferromagnetic. Science 281, 951 (1998)
Y. Ohno et al., Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature 402, 790–792 (1999)
D. Chiba et al., Magnetization vector manipulation by electric fields. Nature 455, 515–518 (2008)
A. Chernyshov et al., Evidence for reversible control of magnetization in a ferromagnetic material by means of spin-orbit magnetic field. Nat. Phys. 5, 656–659 (2009)
C. Gould et al., Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer. Phys. Rev. Lett. 93, 117203 (2004)
M. Yamanouchi et al., Current-induced domain-wall switching in a ferromagnetic semiconductor structure. Nature 428, 539–542 (2004)
H. Ohno et al., (Ga, Mn)As: a new diluted magnetic semiconductor based on GaAs. Appl. Phys. Lett. 69, 363–365 (1996)
H. Munekata et al., Diluted magnetic III–V semiconductors. Phys. Rev. Lett. 63, 1849–1852 (1989)
D. Ferrand et al., Carrier-induced ferromagnetic interactions in p-Doped Zn1−xMnxTe epilayers. J. Cryst. Grow. 214–215, 387–390 (2000)
Y.D. Park et al., A group-IV ferromagnetic semiconductor: MnxGe1−x. Science 295, 651–654 (2002)
F. Xiu et al., Electric-field-controlled ferromagnetism in high-curie-temperature Mn0.05Ge0.95 quantum dots. Nat. Mater. 9, 337–344 (2010)
H. Ohno et al., Electric-field control of ferromagnetism. Nature 408, 944 (2000)
T. Dietl et al., Zener model description of ferromagnetism in Zinc-Blende magnetic semiconductors. Science 287, 1019–1022 (2000)
Y. Wang et al., Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96 Mn0.04 thin films. Appl. Phys. Lett. 92, 101913 (2008)
T. Nie et al., Quest for high-Curie temperature MnxGe1-x diluted magnetic semiconductors for room-temperature spintronics applications. J. Cryst. Growth, in press, 2015, doi: 10.1016/j.jcrysgro.2015.01.025
J. Tang et al., Spin transport in Ge nanowires for diluted magnetic semiconductor-based nonvolatile transpinor. ECS Trans. 64, 613–623 (2014)
J. Tang et al., Electrical spin injection and detection in Mn5Ge3/Ge/Mn5Ge3 nanowire transistors. Nano Lett. 13, 4036–4043 (2013)
International Technology Roadmap of Semiconductors (ITRS) http://www.itrs.net, 2013 Edition
I. Žutić et al., Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004)
M. Johnson, Bipolar spin switch. Science 260, 320–323 (1993)
D.J. Monsma et al., Room temperature-operating spin-valve transistors formed by vacuum bonding. Science 281, 407–409 (1998)
D.J. Monsma et al., Perpendicular hot electron spin-valve effect in a new magnetic field sensor: the spin-valve transistor. Phys. Rev. Lett. 74, 5260–5263 (1995)
M.E. Flatté, G. Vignale, Unipolar spin diodes and transistors. Appl. Phys. Lett. 78, 1273–1275 (2001)
J. Fabian et al., Magnetic bipolar transistor. Appl. Phys. Lett. 84, 85–87 (2004)
M.E. Flatté et al., Theory of semiconductor magnetic bipolar transistors. Appl. Phys. Lett. 82, 4740–4742 (2003)
D.E. Nikonov, G.I. Bourianoff, Spin gain transistor in ferromagnetic semiconductors-the semiconductor Bloch-Equations approach. IEEE Trans. Nanotech. 4, 206–214 (2005)
S. Datta, B. Das, Electronic analog of the electro-optic modulator. Appl. Phys. Lett. 56, 665–667 (1990)
S. Sugahara, M. Tanaka, A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain. Appl. Phys. Lett. 84, 2307–2309 (2004)
M. Johnson, R.H. Silsbee, Interfacial charge-spin coupling: injection and detection of spin magnetization in metals. Phys. Rev. Lett. 55, 1790 (1985)
A. Hirohata, K. Takanashi, Future perspectives for spintronic devices. J. Phys. D Appl. Phys. 47, 193001 (2014)
H.C. Koo et al., Control of spin precession in a spin-injected field effect transistor. Science 325, 1515–1518 (2009)
D. Osintsev et al., Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels. Solid-State Electron. 71, 25–29 (2012)
Y. Saito et al., Spin injection, transport, and read/write operation in Spin-Based MOSFET. Thin Solid Films 519, 8266–8273 (2011)
T. Inokuchi et al., Reconfigurable characteristics of spintronics-based MOSFETs for nonvolatile integrated circuits. in 2010 Symposium on VLSI Technology (VLSIT) (2010), pp. 119–120
T. Marukame et al., Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices. in 2009 I.E. International Electron Devices Meeting (IEDM) (2009), pp. 1–4
S. Sugahara, J. Nitta, Spin-transistor electronics: an overview and outlook. Proc. IEEE 98, 2124–2154 (2010)
S. Salahuddin, S. Datta, Interacting systems for self-correcting low power switching. Appl. Phys. Lett. 90, 093503 (2007)
D. Nikonov, G. Bourianoff, Operation and modeling of semiconductor spintronics computing devices. J. Supercond. Novel Mag. 21, 479–493 (2008)
S. Das Sarma et al., How to make semiconductors ferromagnetic: a first course on spintronics. Solid State Commun. 127, 99–107 (2003)
L. Liu et al., Spin-torque switching with the giant spin hall effect of tantalum. Science 336, 555–558 (2012)
P.K. Amiri, K.L. Wang, Voltage-controlled magnetic anisotropy in spintronic devices. Spin 02, 1240002 (2012)
M. Rahman et al., Experimental prototyping of beyond-CMOS nanowire computing fabrics. in 2013 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) (2013), pp. 134–139
W. Eerenstein et al., Multiferroic and magnetoelectric materials. Nature 442, 759–765 (2006)
R. Ramesh, N.A. Spaldin, Multiferroics: progress and prospects in thin films. Nat. Mater. 6, 21–29 (2007)
M. Gajek et al., Tunnel junctions with multiferroic barriers. Nat. Mater. 6, 296–302 (2007)
G. Srinivasan et al., Magnetoelectric bilayer and multilayer structures of magnetostrictive and piezoelectric oxides. Phys. Rev. B 64, 214408 (2001)
T. Wu et al., Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices. Appl. Phys. Lett. 98, 262504 (2011)
D. Chiba et al., Electrical control of the ferromagnetic phase transition in cobalt at room temperature. Nat. Mater. 10, 853–856 (2011)
I.V. Ovchinnikov, K.L. Wang, Voltage sensitivity of Curie temperature in ultrathin metallic films. Phys. Rev. B 80, 012405 (2009)
C.-F. Pai et al., Spin transfer torque devices utilizing the giant spin Hall effect of tungsten. Appl. Phys. Lett. 101, 122404–4 (2012)
M.K. Niranjan et al., Electric field effect on magnetization at the Fe/MgO(001) interface. Appl. Phys. Lett. 96, 222504 (2010)
C.-G. Duan et al., Surface magnetoelectric effect in ferromagnetic metal films. Phys. Rev. Lett. 101, 137201 (2008)
J.P. Velev et al., Multi-ferroic and magnetoelectric materials and interfaces. Philos. Trans. R Soc. A: Math. Phys. Eng. Sci. 369, 3069–3097 (2011)
F. Bonell et al., Large change in perpendicular magnetic anisotropy induced by an electric field in FePd ultrathin films. Appl. Phys. Lett. 98, 232510 (2011)
T. Maruyama et al., Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. Nat. Nanotechnol. 4, 158–161 (2009)
T. Nozaki et al., Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions. Appl. Phys. Lett. 96, 022506 (2010)
J. Zhu et al., Voltage-induced ferromagnetic resonance in magnetic tunnel junctions. Phys. Rev. Lett. 108, 197203 (2012)
T. Nozaki et al., Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer. Nat. Phys. 8, 492–497 (2012)
M. Mayberry, Emerging Technologies and Moore’s Law: Prospects for the Future. http://csg5.nist.gov/pml/div683/upload/Mayberry_March_2010.pdf
K.L. Wang, P. Khalili Amiri, Nonvolatile spintronics: perspectives on instant-on nonvolatile nanoelectronic systems. J. Spin. 2, 1250009 (2012)
C.J. Lin et al., 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell. in 2009 I.E. International Electron Devices Meeting (IEDM) (2009), pp. 1–4
S. Assefa et al., Fabrication and characterization of MgO-based magnetic tunnel junctions for spin momentum transfer switching. J. Appl. Phys. 102, 063901 (2007)
Y.M. Huai et al., Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions. Appl. Phys. Lett. 84, 3118–3120 (2004)
E. Chen et al., Advances and future prospects of spin-transfer torque random access memory. IEEE Trans. Magn. 46, 1873–1878 (2010)
S.S.P. Parkin et al., Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers. Nat. Mater. 3, 862–867 (2004)
K.L. Wang et al., Low-power non-volatile spintronic memory: STT-RAM and beyond. J. Phys. D 46, 074003 (2013)
P.K. Amiri et al., Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM. IEEE Electr. Device Lett. 32, 57–59 (2011)
Y. Huai, Spin-transfer Torque MRAM (STT-MRAM): challenges and prospects. AAPPS Bulletin 18, 33–40 (2008)
P. Khalili Amiri, K.L. Wang, Voltage-controlled magnetic anisotropy in spintronic devices. Spin 2, 1240002 (2012)
P.K. Amiri et al., Electric-field-induced thermally assisted switching of monodomain magnetic bits. J. Appl. Phys. 113, 013912 (2013)
R. Dorrance et al., Diode-MTJ crossbar memory cell using voltage-induced unipolar switching for high-density MRAM. EEEE Electr. Device Lett. 34, 753–755 (2013)
S. Ikeda et al., A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. Nat. Mater. 9, 721–724 (2010)
D.C. Worledge et al., Spin torque switching of perpendicular Ta | CoFeB | MgO-based magnetic tunnel junctions. Appl. Phys. Lett. 98, 022501 (2011)
P.K. Amiri et al., Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions. Appl. Phys. Lett. 98, 112507 (2011)
S. Yakata et al., Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB/MgO/CoFeB magnetic tunnel junctions. J. Appl. Phys. 105, 07D131 (2009)
W.-G. Wang et al., Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB. Appl. Phys. Lett. 99, 102502 (2011)
M. Endo et al., Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co(40)Fe(40)B(20)/Ta structures. Appl. Phys. Lett. 96, 212503 (2010)
S.S. Ha, Voltage induced magnetic anisotropy change in ultrathin Fe80Co20/MgO junctions with Brillouin light scattering. Appl. Phys. Lett. 96, 142512 (2010)
Y. Shiota et al., Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers. Appl. Phys. Exp. 2, 063001 (2009)
Y. Shiota et al., Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses. Nat. Mater. 11, 39–43 (2012)
W.-G. Wang et al., Electric-field-assisted switching in magnetic tunnel junctions. Nat. Mater. 11, 64–68 (2012)
A.J. Schellekens et al., Electric-field control of domain wall motion in perpendicularly magnetized materials. Nat. Commun. 3, 847 (2012)
C.G. Duan et al., Tailoring magnetic anisotropy at the ferromagnetic/ferroelectric interface. Appl. Phys. Lett. 92, 122905 (2008)
S.E. Barnes et al., Rashba spin-orbit anisotropy and the electric field control of magnetism. Sci. Rep. 4, 4105 (2014)
S. Yuasa et al., Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions. Nat. Mater. 3, 868–871 (2004)
Y. Shiota et al., Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product. Appl. Phys. Lett. 101, 102406 (2012)
J.G. Alzate et al., Voltage-induced switching of nanoscale magnetic tunnel junctions. IEDM Tech. Digest 29(5) 1–4 (2012)
W. Feng et al., Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: a first-principles study. Phys. Rev. B 86, 165108 (2012)
S. Kanai, Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. Appl. Phys. Lett. 101, 122403 (2012)
M.T. Rahman et al., Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer. J. Appl. Phys. 111, 07C907 (2012)
M. Gajek et al., Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy. Appl. Phys. Lett. 100, 132408 (2012)
Z.M. Zeng et al., Ultralow-current-density and bias-field-free spin-transfer nano-oscillator. Sci. Rep. 3, 1426 (2013)
Z. Zeng et al., High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy. ACS Nano (2012)
H. Maehara et al., High Q factor over 3000 due to out-of-plane precession in nano-contact spin-torque oscillator based on magnetic tunnel junctions. Appl. Phys. Exp. 7, 023003 (2014)
B. Fang et al., Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field. arXiv:1410.4958
S. Miwa et al., Highly sensitive nanoscale spin-torque diode. Nat. Mater. 13, 50–56 (2014)
J.G. Alzate et al., Voltage-induced switching of CoFeB-MgO magnetic tunnel junctions. in 56th Conference on Magnetism and Magnetic Materials Scottsdale, Arizona (2011), pp. EG-11
J.G. Alzate et al., Voltage-induced switching of nanoscale magnetic tunnel junctions. in Presented at the IEEE International Electron Devices Meeting (IEDM), San Francisco, CA (2012)
J.G. Alzate et al., Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions. Appl. Phys. Lett. 104, 112410 (2014)
A. Rajanikanth et al., Magnetic anisotropy modified by electric field in V/Fe/MgO(001)/Fe epitaxial magnetic tunnel junction. Appl. Phys. Lett. 103, 062402 (2013)
T. Liu et al., Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy. Sci. Rep. 4, 5895 (2014)
P.V. Ong et al., Electric field control and effect of Pd capping on magnetocrystalline anisotropy in FePd thin films: a first-principles study. Phys. Rev. B 89, 094422 (2014)
K. Kita et al., Electric-field-control of magnetic anisotropy of Co0.6Fe0.2B0.2 oxide stacks using reduced voltage. J. Appl. Phys. 112, 033919 (2012)
T. Seki et al., Coercivity change in an FePt thin layer in a Hall device by voltage application. Appl. Phys. Lett. 98, 212505 (2011)
J.G. Alzate, Voltage-controlled magnetic dynamics in nanoscale magnetic tunnel junctions. Ph.D., Electrical Engineering, University of California, Los Angeles (2014)
J.A. Katine, E.E. Fullerton, Device implications of spin-transfer torques. J. Magn. Magn. Mater. 320, 1217–1226 (2008)
K. Lee, S.H. Kang, Development of Embedded STT-MRAM for Mobile System-on-Chips. IEEE Trans. Magn. 47, 131–136 (2011)
Note, ‘however’, that the validity of the present analysis does not depend on the sign of the VCMA effect
C.A.F. Vaz et al., Magnetism in ultrathin film structures. Rep. Progr. Phys. 71, 056501 (2008)
H.B. Callen, E. Callen, The present status of the temperature dependence of magnetocrystalline anisotropy, and the l(l+1)/2 power law. J. Phys. Chem. Solids 27, 1271–1285 (1966)
N.W. Ashcroft, N.D. Mermin, Solid State Physics (Saunders College, Philadelphia, 1976)
J.Z. Sun, Spin-current interaction with a monodomain magnetic body: a model study. Phys. Rev. B 62, 570–578 (2000)
J.Z. Sun et al., Effect of subvolume excitation and spin-torque efficiency on magnetic switching. Phys. Rev. B 84, 064413 (2011)
A. Sellai et al., Barrier height and interface characteristics of Au/Mn5Ge3/Ge (111) Schottky contacts for spin injection. Semicond. Sci. Technol. 27, 035014 (2012)
W. Zhao, Y. Cao, Predictive technology model for nano-CMOS design exploration. J. Emerg. Technol. Comput. Syst. 3, 1 (2007)
I. Ovchinnikov, K. Wang, Theory of electric-field-controlled surface ferromagnetic transition in metals. Phys. Rev. B 79, 020402 (2009)
S.K. Kim et al., Experimental observation of magnetically dead layers in Ni/Pt multilayer films. Phys. Rev. B 64, 052406 (2001)
R. Winkler, Spin-orbit coupling effects in two-dimensional electron and hole systems. http://rave.ohiolink.edu/ebooks/ebc/10864040 (2003)
I.M. Miron et al., Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer. Nat. Mater. 9, 230–234 (2010)
Y. Fan et al., Magnetization switching through giant spin-orbit torque in a magnetically doped topological insulator heterostructure. Nat. Mater. 13, 699–704 (2014)
L.D. Landau, E.M. Lifschitz, Statistical Physics, Part 2 (Pergamon Press, Oxford, 1981)
T.L. Gilbert, Classics in magnetics: a phenomenological theory of damping in ferromagnetic materials. IEEE Trans. Magn. 40, 3443–3449 (2004)
G. Yu et al., Switching of perpendicular magnetization by spin-orbit torques in the absence of external magnetic fields. Nat. Nanotechnol. 9, 548–554 (2014)
S. Hoffman et al., Spin-torque ac impedance in magnetic tunnel junctions. Phys. Rev. B 86, 214420 (2012)
J. Hirsch, Spin hall effect. Phys. Rev. Lett. 83, 1834–1837 (1999)
Y.A. Bychkov, E.I. Rashba, Oscillatory effects and the magnetic susceptibility of carriers in inversion layers. J. Phys. C 17, 6039–6045 (1984)
V.M. Edelstein, Spin polarization of conduction electrons induced by electric current in two-dimensional asymmetric electron systems. Solid State Commun. 73, 233–235 (1990)
I.M. Miron et al., Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection. Nature 476, 189–193 (2011)
M.Z. Hasan, C.L. Kane, Colloquium: topological insulators. Rev. Mod. Phys. 82, 3045–3067 (2010)
X. Kou et al., Interplay between different magnetisms in Cr-doped topological insulators. ACS Nano 7, 9205–9212 (2013)
J. Kim et al., Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO. Nat. Mater. 12, 240–245 (2013)
A. Imre et al., Majority logic gate for magnetic quantum-dot cellular automata. Science 311, 205–208 (2006)
D. Bhowmik et al., Spin hall effect clocking of nanomagnetic logic without a magnetic field. Nat. Nanotechnol. 9, 59–63 (2014)
Smullen CW et al., Relaxing non-volatility for fast and energy-efficient STT-RAM caches. in Presented at the IEEE 17th Int. Symp. High Performance Computer Architecture, San Antonio, TX (2011)
R. Fengbo, D. Markovic, True energy-performance analysis of the MTJ-based logic-in-memory architecture (1-bit full adder). IEEE Trans. Electr. Devices 57, 1023–1028 (2010)
A. Khitun et al., Magnetic cellular nonlinear network with spin wave bus for image processing. Superlattices Microstruct. 47, 464–483 (2010)
A. Khitun, Multi-frequency magnonic logic circuits for parallel data processing. J. Appl. Phys. 111, 054307 (2012)
T. Schneider et al., Realization of spin-wave logic gates. Appl. Phys. Lett. 92, 022505 (2008)
M.P. Kostylev et al., Spin-wave logical gates. Appl. Phys. Lett. 87, 153501-1-3 (2005)
A.A. Serga et al., YIG magnonics. J. Phys. D 43, 264002 (2010)
S.I. Kiselev et al., Microwave oscillations of a nanomagnet driven by a spin-polarized current. Nature 425, 380–383 (2003)
S. Cherepov et al., Electric-field-induced spin wave generation using multiferroic magnetoelectric cells. Appl. Phys. Lett. 104, 082403 (2014)
Y.N. Wu et al., A three-terminal spin-wave device for logic applications. J. Nanoelectron. Optoelectron. 4, 394–397 (2009)
L.O. Chua, L. Yang, Cellular neural networks—theory. IEEE Trans. Circuits Syst. 35, 1257–1272 (1988)
L.O. Chua, L. Yang, Cellular neural networks—applications. IEEE Trans. Circuits Syst. 35, 1273–1290 (1988)
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Tang, J., Shao, Q., Upadhyaya, P., Amiri, P.K., Wang, K.L. (2015). Electric Control of Magnetic Devices for Spintronic Computing. In: Zhao, W., Prenat, G. (eds) Spintronics-based Computing. Springer, Cham. https://doi.org/10.1007/978-3-319-15180-9_2
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