Abstract
We discretize a unipolar electrothermal drift-diffusion model for organic semiconductor devices with Gauss–Fermi statistics and charge carrier mobilities having positive temperature feedback. We apply temperature dependent Ohmic contact boundary conditions for the electrostatic potential and use a finite volume based generalized Scharfetter-Gummel scheme. Applying path-following techniques we demonstrate that the model exhibits S-shaped current-voltage curves with regions of negative differential resistance, only recently observed experimentally.
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Acknowledgements
The authors gratefully acknowledge the funding by the German Research Foundation (DFG) under Germany’s Excellence Strategy – The Berlin Mathematics Research Center MATH+ (EXC-2046/1, project ID: 390685689) in project AA2-1 and AA2-6.
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Fuhrmann, J., Hai Doan, D., Glitzky, A., Liero, M., Nika, G. (2020). Unipolar Drift-Diffusion Simulation of S-Shaped Current-Voltage Relations for Organic Semiconductor Devices. In: Klöfkorn, R., Keilegavlen, E., Radu, F.A., Fuhrmann, J. (eds) Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples. FVCA 2020. Springer Proceedings in Mathematics & Statistics, vol 323. Springer, Cham. https://doi.org/10.1007/978-3-030-43651-3_59
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DOI: https://doi.org/10.1007/978-3-030-43651-3_59
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