Abstract
Electron transport properties of Ga0.47In0.53As are reviewed. The available physical constants of the material and results on electron mobility in bulk materials, 2deg systems and under hot-electron conditions are presented. Applications of the material in the construction offet’s and photo-conductive detectors are briefly discussed.
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Nag, B.R. Ga0.47 In0.53 As—The material for high-speed devices. Pramana - J Phys 23, 411–421 (1984). https://doi.org/10.1007/BF02846585
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DOI: https://doi.org/10.1007/BF02846585