Abstract
Two GaAs single crystals were grown on a centrifuge at 3g, 6g and 9g acceleration. Impurity striations and dislocations were observed for different gravity conditions. Temperature oscillations in molten Sn indicated that the conditions used to grow GaAs single crystals showed depressing temperature oscillations. A possible reason is given for the increase of dislocation density of GaAs with increasing centrifugal force in a sandblasted quartz boat.
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© 1994 Springer Science+Business Media New York
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Zhou, B. et al. (1994). Growth of GaAs Single Crystals at High Gravity. In: Regel, L.L., Wilcox, W.R. (eds) Materials Processing in High Gravity. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2520-2_5
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DOI: https://doi.org/10.1007/978-1-4615-2520-2_5
Publisher Name: Springer, Boston, MA
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